Effects of oxygen, fluorine, and hydroxyl passivation on electronic properties of 〈001〉 -oriented silicon nanowires

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Migas, D B ^a   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CANNING; ELECTRIC WIRE; ELECTRONIC PROPERTIES; FLUORINE; FUNCTIONAL GROUPS; GALLIUM ALLOYS; HYDROGEN; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OXYGEN; PASSIVATION; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; TECHNOLOGY;

AB INITIO CALCULATIONS; BAND DISPERSIONS; BAND-GAP ENGINEERING; DIPOLE MATRIX ELEMENTS; DIRECT TRANSITION; OSCILLATOR STRENGTH; OXYGEN ATOMS; SILICON NANOWIRES; SPECIFIC SURFACES;

NONMETALS;

EID: 48849105357     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2956864     Document Type: Article

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