First-principles study of the band gap structure of oxygen-passivated silicon nanonets

Nanoscale Research Letters

Volumn 4, Issue 5, 2009, Pages 409-413

  Lin, Linhan ^a   Li, Dexing ^a   Feng, Jiayou ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Direct band gap; First principles calculation; Oxygen passivated; Pore array distribution; Porosity; Silicon nanonets

Indexed keywords

BAND GAP STRUCTURES; BAND GAP TRANSITIONS; DENSITY FUNCTIONAL; DIRECT BAND GAP; ENERGY BAND GAPS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDIES; GENERALIZED GRADIENT APPROXIMATIONS; NANO NETS; NANO STRUCTURES; OXYGEN ATOMS; PORE ARRAY DISTRIBUTION; SILICON-BASED; SPECIAL STRUCTURES;

CARBON NANOTUBES; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; LIGHT; LIGHT SOURCES; NANOCRYSTALLINE MATERIALS; OXYGEN; PASSIVATION; POROSITY; SOLID STATE PHYSICS;

ENERGY GAP;

EID: 62949219165     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9259-0     Document Type: Article

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