Deep levels investigation of AlGaN/GaN heterostructure transistors

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4877-4879

  Chikhaoui, W ^a   Bluet, J M ^a   Girard, P ^a   Bremond, G ^a   Bru Chevallier, C ^a   Dua, C ^b   Aubry, R ^b  

^a UNIVERSITÉ DE LYON   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Defects; DLTS; High electron mobility transistors (HEMT)

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM NITRIDE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR ALLOYS; SILICON CARBIDE; SILICON COMPOUNDS;

AL MOLE FRACTIONS; ALGAN/GAN HETEROSTRUCTURES; GAN BUFFER LAYERS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); POOLE-FRENKEL MECHANISMS; SCHOTTKY CONTACTS; SPACE CHARGE REGIONS; STRONG DEPENDENCES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 74349105426     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.231     Document Type: Article

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