The leakage current of the Schottky contact on the mesa edge of AlGaN/ GaN heterostructure

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 942-944

  Xu, Chuan ^a   Wang, Jinyan ^a   Chen, Hongwei ^a   Xu, Fujun ^a   Dong, Zhihua ^a   Hao, Yilong ^a   Wen, Cheng P ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

AlGaN GaN; Characteristic electric field strength; Frenkel Poole; Leakage current; Mesa edge; Ridge furrow structure

Indexed keywords

BIAS VOLTAGE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CONDUCTION BANDS; ELECTRIC FIELDS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRIC FIELD STRENGTH; ENERGY DISTRIBUTION; MESA EDGE; REVERSE BIAS VOLTAGE; RIDGE-FURROW STRUCTURE; SCHOTTKY CONTACT;

HETEROJUNCTIONS;

EID: 36148952962     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906932     Document Type: Article

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