Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-(7 × 7)

Physical Review Letters

Volumn 94, Issue 10, 2005, Pages

  Wang, Y L ^a   Gao, H J ^a   Guo, H M ^a   Wang, Sanwu ^b   Pantelides, Sokrates T ^c  

^a INSTITUTE OF PHYSICS   (China)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; SEMICONDUCTOR NANOSTRUCTURES; SUBMONOLAYERS; X-RAY STANDING WAVES (XSW);

ADSORPTION; BONDING; DEPOSITION; MONOLAYERS; NANOSTRUCTURED MATERIALS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE REACTIONS; THERMODYNAMIC STABILITY; X RAY ANALYSIS;

GERMANIUM;

EID: 18044379171     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.106101     Document Type: Article

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