Growth of Ge hexagonal meshwork films on Si(111)-7 × 7

Nanotechnology

Volumn 17, Issue 17, 2006, Pages 4413-4415

  Xu, M C ^a   Ma, H F ^a   Ji, W ^a   Yang, B ^a   Gao, H J ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSCOPIC EXAMINATION; SCANNING TUNNELING MICROSCOPY; SILICON;

BI LAYERS; GROWTH MODES; IN SITU SCANNING; ROOM TEMPERATURES; SI(111); STACKING SEQUENCES;

GERMANIUM;

GERMANIUM; NANOFILM; NANOMESH; SILICON;

ARTICLE; CHEMICAL REACTION; CHEMICAL STRUCTURE; NANOANALYSIS; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY; STRUCTURE ANALYSIS;

EID: 55149125147     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/17/021     Document Type: Article

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