Modification of local structure and its influence on electrical activity of near (310) σ5 grain boundary in bulk silicon

Materials Transactions

Volumn 48, Issue 2, 2007, Pages 143-147

  Kutsukake, Kentaro ^a,b   Usami, Noritaka ^a   Fujiwara, Kozo ^a   Nose, Yoshitaro ^a   Sugawara, Takamasa ^a   Shishido, Toetsu ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Bicrystal; Dislocation; Electrical activity; Grain boundary; Silicon

Indexed keywords

ELECTRICAL ACTIVITY; SEED CRYSTALS; SINGULAR COINCIDENCE ORIENTATION;

BICRYSTALS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; SILICON;

CRYSTAL GROWTH;

EID: 34047137806     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.48.143     Document Type: Article

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