SCOPUS 정보 검색 플랫폼

European Physical Journal B

Volumn 73, Issue 3, 2010, Pages 309-319

Donor impurity in vertically-coupled quantum-dots under hydrostatic pressure and applied electric field

(3) Duque, C M a Barseghyan, M G b Duque, C A a

a UNIVERSIDAD DE ANTIOQUIA (Colombia)

b YEREVAN STATE UNIVERSITY (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM CONCENTRATION; APPLIED ELECTRIC FIELD; BARRIER MATERIAL; BARRIER THICKNESS; COMBINED EFFECT; CORRELATED ELECTRONS; COUPLED QUANTUM WELL; DEGREE OF SYMMETRY; DONOR IMPURITIES; EFFECTIVE MASS APPROXIMATION; GAAS; GROWTH DIRECTIONS; HETEROSTRUCTURES; HYDROGENIC DONOR IMPURITY; IMPURITY BINDING ENERGY; LOW DIMENSIONAL STRUCTURE; PHENOMENOLOGICAL MODELS; POTENTIAL BARRIERS; PRESSURE DEPENDENT; QUANTUM DOT STRUCTURE; QUANTUM DOTS; STRUCTURAL DIMENSIONS; VARIATIONAL METHODS; WELL REGION; WELL WIDTH; Z-DIRECTIONS;

CARRIER CONCENTRATION; ELECTRIC FIELDS; GALLIUM; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; NUCLEAR ENERGY; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; WAVE FUNCTIONS;

BINDING ENERGY;

EID: 76749127056 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2009-00433-7 Document Type: Article

Times cited : (50)

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