Impurity-related polarizability and photoionization-cross section in GaAs-Ga1 - x Alx As double quantum wells under electric fields and hydrostatic pressure

Superlattices and Microstructures

Volumn 45, Issue 6, 2009, Pages 590-597

  Morales, A L ^a   Raigoza, N ^a   Reyes Gomez E ^a   Osorio Guillen J M ^a   Duque, C A ^a  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

Author keywords

Electric field; Hydrostatic pressure; Impurity; Photoionization

Indexed keywords

APPLIED ELECTRIC FIELDS; ASYMMETRIC QUANTUM WELLS; BARRIER MATERIALS; CORRELATED ELECTRONS; CROSS SECTIONS; DESIGN AND CONSTRUCTIONS; DOUBLE QUANTUM WELL HETEROSTRUCTURES; DOUBLE QUANTUM WELLS; EXTERNAL ELECTRIC FIELDS; GAAS; GROWTH DIRECTIONS; IMPURITY BINDING ENERGIES; PHOTO IONIZATION CROSS SECTIONS; POLARIZABILITY; TWO-DIMENSIONAL SYSTEMS;

ALUMINUM; BINDING ENERGY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; GALLIUM ALLOYS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; PERMITTIVITY; PHOTOIONIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 64949100983     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.03.001     Document Type: Article

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