Binding energy of hydrogenic impurity in GaAs / Ga1 - x Alx As multi-quantum-dot structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 9, 2008, Pages 2879-2883

  Zheng, Jin liang ^a  

^a MINNAN NORMAL UNIVERSITY   (China)

Author keywords

Binding energy; Multi quantum dot structure; Variational method

Indexed keywords

BINDING ENERGY; IMPURITIES; SEMICONDUCTING GALLIUM ARSENIDE; THICKNESS MEASUREMENT;

BARRIER THICKNESS; HYDROGENIC IMPURITY; LOCALIZATION EFFECTS; VARIATIONAL METHODS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 44649106354     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.01.017     Document Type: Article

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