Donor-related density of states and polarizability in a GaAs-(Ga, Al)As quantum-well under hydrostatic pressure and applied electric field

Physica Status Solidi Conferences

Volumn , Issue 2, 2003, Pages 652-656

  Morales, A L ^a   Montes, A ^a   Lopez S Y ^a   Raigoza, N ^a   Duque, C A ^a  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; IMPURITIES; OPTOELECTRONIC DEVICES; POLARIZATION; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; GALLIUM ARSENIDE; HYDRAULICS; HYDRODYNAMICS; SEMICONDUCTING GALLIUM;

CARRIER DISTRIBUTION; IMPURITY POLARIZABILITY; INTERBAND TRANSITIONS; CONSTANT PRESSURES; DELOCALIZED ELECTRON; EXTERNAL ELECTRIC FIELD; GROWTH DIRECTIONS; HYDROSTATIC STRESS; IMPURITY POSITIONS; POLARIZABILITIES; THEORETICAL CALCULATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242287691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306176     Document Type: Conference Paper

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