Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 579-581

  Kim, Yong Hae ^a   Chung, Choong Heui ^a   Moon, Jaehyun ^a   Kim, Gi Heon ^a   Park, Dong Jin ^a   Kim, Dae Won ^a   Lim, Jung Wook ^a   Yun, Sun Jin ^a   Song, Yoon Ho ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Buffer; Flat panel display; Polycrystalline silicon (poly Si); Thin film transistor (TFT)

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; MOS DEVICES; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

FLAT-PANEL DISPLAY; OXIDE-SILICON-OXIDE BUFFER STRUCTURE; PLASTIC SUBSTRATES; ULTRALOW TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 33745636371     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877713     Document Type: Article

References (13)

1. S. Wagner, H. Gleskova, I.-C. Cheng, J. C. Sturm, and Z. Suo, "Mechanics of TFT technology on flexible substrates," in Flexible Flat Panel Displays, G. P. Crawford, Ed. West Sussex, England: Wiley, 2005, pp. 263-282.
2. M. J. Lee, C. P. Judge, and S. W. Wright, "Thin film transistors for displays on plastic substrates," Solid State Electron., vol. 44, no. 8, pp. 1431-1434, Aug. 2000.
3. D. P. Gosain, T. Noguchi, and S. Usui, "High mobility thin film transistors fabricated on a plastic substrate at a processing temperature of 110 °C," Jpn. J. Appl. Phys., Lett., vol. 39, pt. 2, no. 3A/B, pp. L179-L181, Mar. 2000.
4. T. Serikawa and F. Omata, "High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions," Jpn. J. Appl. Phys., Lett., vol. 39, pt. 2, no. 5A, pp. L393-L395, May 2000.
5. P. G. Carey, P. M. Smith, S. D. Theiss, and P. Wichboldt, "Polysilicon thin film transistors fabricated on low temperature plastic substrates," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, no. 4, pp. 1946-1949, Jul./Aug. 1999.
6. F. Lemmi, W. Chung, S. Lin, P. M. Smith, T. Sasagawa, B. C. Drews, A. Hua, J. R. Stern, and J. Y. Chen, "High-Performance TFTs fabricated on plastic substrate," IEEE Electron Device Lett., vol. 25, no. 7, pp. 486-488, Jul. 2004.
7. J. Y. Kwon, D. Y. Kim, H. S. Cho, K. B. Park, J. S. Jung, J. M. Kim, Y. S. Park, and T. Noguchi, "Low temperature poly-Si thin film transistor on plastic substrates," IEICE Trans. Electron., vol. E88-C, no. 4, pp. 667-671, Apr. 2005.
8. Y. H. Kim, C. Y. Sohn, J. W. Lim, S. J. Yun, C. S. Hwang, C. H. Chung, Y. W. Ko, and J. H. Lee, "High-performance ultralow-temperature polycrystalline silicon using sequential lateral solidification," IEEE Electron Device Lett., vol. 25, no. 8, pp. 550-552, Aug. 2004.
9. Y. H. Kim, C. H. Chung, S. J. Yun, J. Moon, D. J. Park, D. W. Kim, J. W. Lim, Y. H. Song, and J. H. Lee, "Large grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate," Thin Solid Films, vol. 493, no. 1/2, pp. 192-196, Dec. 2005.
10. H. J. Kim and J. S. Im, "New excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si films for thin film transistors," Appl. Phys. Lett., vol. 68, no. 11, pp. 1513-1515, Mar. 1996.
11. J. W. Lim and S. J. Yun, "Insulators with high stability for electroluminescent devices," Jpn. J. Appl. Phys., Lett., vol. 42, pt. 2, no. 6B, pp. L663-L665, Jun. 2003.
12. G. Kerrien, M. Hernandez, C. Laviron, T. Sarnet, D. Debarre, T. Noguchi, D. Zahorski, J. Venturini, M. N. Semeria, and J. Boulmer, "Optical characterization of laser processed ultra-shallow junctions," Appl. Surf. Sci., vol. 208-209, pp. 277-284, 2003.
13. x : H as interlayer dielectric," Appl. Phys. Lett., vol. 86, no. 9, p. 093504, 2005.