Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiN x: H as interlayer dielectric

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Chung, Choong Heui ^a   Kim, Yong Hae ^a   Moon, Jaehyun ^a   Lee, Myung Hee ^a   Lim, Jung Wook ^a   Yun, Sun Jin ^a   Park, Dong Jin ^a   Kim, Dae Won ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; INTERLAYER DIELECTRIC; STRAINED BONDS;

ANNEALING; DIELECTRIC MATERIALS; HYDROGENATION; LOW TEMPERATURE EFFECTS; PLASMAS; SILICON NITRIDE; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 84855901977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178407     Document Type: Article

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