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Journal of Materials Science

Volumn 45, Issue 6, 2010, Pages 1503-1506

Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD

(4) Yu, Nai Sen a Zhu, Xue Liang b Peng, Ming Zeng b Zhou, Jun Ming b

a DALIAN NATIONALITIES UNIVERSITY (China)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT SIMULATIONS; GAN EPILAYERS; GAN LAYERS; HIGH RESOLUTION; INHOMOGENEOUS DEFORMATION; MASK LESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRO RAMAN SPECTROSCOPY; MOCVD; STRESS DISTRIBUTION; WING TILTS; X RAY ROCKING CURVE;

ATOMIC FORCE MICROSCOPY; DEFORMATION; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; RAMAN SPECTROSCOPY; STRESS CONCENTRATION;

SAPPHIRE;

EID: 76649109218 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-009-4113-4 Document Type: Article

Times cited : (7)

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