Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations

Solid-State Electronics

Volumn 54, Issue 3, 2010, Pages 268-274

  Jankovic, Nebojsa ^a   Igic, Petar ^b   Sakurai, Naoki ^c  

^a UNIVERSITY OF NI   (Serbia)

^b SWANSEA UNIVERSITY   (United Kingdom)

^c HITACHI LTD   (Japan)

Author keywords

Control; IGBT; Lifetime; Modeling; Power

Indexed keywords

COMPACT MODEL; ELECTRICAL PERFORMANCE; IGBT; LOCALIZED LIFETIME CONTROL; MODELING POWER; PHYSICS-BASED; POWER CIRCUIT; PULSE-WIDTH-MODULATED; SINGLE PHASE; SUB-CIRCUITS; TOTAL POWER; TWO-DIMENSIONAL NUMERICAL SIMULATION;

CIRCUIT SIMULATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PULSE WIDTH MODULATION;

ACTIVE FILTERS;

EID: 76549120712     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.014     Document Type: Article

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