An advance physics-based sub-circuit model of IGBT

IEEE International Symposium on Industrial Electronics

Volumn 1, Issue , 2006, Pages 447-452

  Jankovic, Nebojsa ^a   Zhou, Zhongfu ^b   Batcup, Steve ^b   Igic, Petar ^b  

^a UNIVERSITY OF NI   (Serbia)

^b SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; CIRCUIT SIMULATION; CIRCUIT THEORY; INDUSTRIAL ELECTRONICS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NETWORKS (CIRCUITS); OHMIC CONTACTS;

CIRCUIT APPLICATIONS; CIRCUIT SIMULATORS; DMOSFET; ELECTRICAL MEASUREMENTS; ELECTRICAL PERFORMANCES; EQUIVALENT CIRCUIT MODELING; HIGH-ACCURACY; INTERNATIONAL SYMPOSIUM; LOSSY TRANSMISSION LINES; NON-LINEAR; OHMIC RESISTANCE; ONE-DIMENSIONAL PHYSICS; SIMULATION RESULTS; SUB CIRCUITS; SUB-CIRCUIT MODELS; TEST POWERS;

SPICE;

EID: 53649111318     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2006.295636     Document Type: Conference Paper

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