Optimized local lifetime control for the superior IGBTs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 335-338

  Konishi, Y ^a   Onishi, Y ^a   Momota, S ^a   Sakurai, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HELIUM; ION IMPLANTATION; POWER ELECTRONICS; RADIATION HARDENING; SILICON WAFERS;

HELIUM ION IRRADIATION; INSULATED GATE BIPOLAR TRANSISTORS; ION ACCELERATIVE VOLTAGE; OPTIMIZED LOCAL LIFETIME CONTROL; RECOMBINATION LAYERS;

BIPOLAR TRANSISTORS;

EID: 0029721711     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)