A new collector structure for thin wafer NPT-IGBT with low dose p- Si injection layer and high dose p+ Ge contact layer

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 441-444

  Sugiyama, Takahide ^a   Ueda, Hiroyuki ^a   Ishiko, Masayasu ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRODES; ELECTRON MOBILITY; HOLE MOBILITY; SILICON WAFERS;

CONTACT RESISTANCE; HIGH PERFORMANCE MOTOR INVERTER SYSTEMS; HOLE INJECTION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 4944230115     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. K. Hamada, T. Kushida, A. Kawahashi, M. Ishiko, "A 600V 200A Low Loss High Current Density Trench IGBT for HybridVehicle", Proceedings of ISPSD, pp449-452, 2001.
3. T. Laska, J. Fugger, F. Hirler, W. Scholz, "Optimizing the Vretical IGBT Structure - The NPT Concept as the Most Economic and Electrically Ideal Solution for a 1200V-IGBT", Proceedings of ISPSD 1996, pp.169-172, 1996
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6. T. Laska, M. Münzen F. Pfirsch, C. Schaeffer, T. Schmidt, "The Field Stop IGBT (FS IGBT) - A New Power Device Concept with a Great Important Potential", Proceedings of ISPSD 2000, pp.361-364, 2000
7. For example, S. M. Sze, "Physics of Semiconductor devices", pp.122-126, 1981