A 2D physically based compact model for advanced power bipolar devices

Microelectronics Journal

Volumn 35, Issue 7, 2004, Pages 591-594

  Igic, P M ^a   Towers, M S ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Compact model; Gate turn off thyristor; Insulated gate bipolar transistor

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; FINITE ELEMENT METHOD; GATES (TRANSISTOR); INSULATED GATE BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; PROBLEM SOLVING; SWITCHES; VOLTAGE MEASUREMENT;

AMBIPOLAR DIFFUSION EQUATION (ADE); COMPACT MODEL; DOUBLE PULSE SWITCHING; GATE TURN-OFF THYRISTORS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 2442534670     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.02.006     Document Type: Article

References (5)

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