SPICE modeling of PT IGBT thermal behavior

IET Seminar Digest

Volumn 2008, Issue 2, 2008, Pages

  Jankovic, N ^a   Igic, P ^b  

^a UNIVERSITY OF NI   (Serbia)

^b SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Modelling; PT IGBT; SPICE; Thermal

Indexed keywords

ELECTRO-THERMAL MODEL; FITTING PARAMETERS; MODEL ACCURACY; MODELLING; POWER DEVICES; PT IGBT; SPICE MODELING; THERMAL; THERMAL BEHAVIORS; TRANSIENT MEASUREMENT;

ACTIVE FILTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); INTERNET SERVICE PROVIDERS; PHOTOTRANSISTORS; POWER ELECTRONICS; TRANSIENT ANALYSIS;

SPICE;

EID: 67650544406     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ic:20080205     Document Type: Conference Paper

References (13)

1. Z.Zhou et al.: Dynamic Thermal Simulation of Power Devices Operating with PWM Signals in a Three-Phase Inverter Drive System, Proc.12th International Power Electronics and Motion Control Conference, Portoroz, Slovenia, 2006, pp. 100-105.
2. F. Calmon et al., Thermal behavior of PT and NPT IGBT, Fifth International Conference on Power Electronics and Variable-Speed Drives, 1994, pp. 29-34.
3. A Ammous et al., Electrothermal Modeling of IGBT's: Application to Short-Circuit Conditions, IEEE Transaction on Power Electronics, Vol. 15, No. 4, pp.778-790, 2000.
4. A.R. Hefner, Modeling Buffer Layer IGBT's for Circuit Simulation, IEEE Trans. on Power Electronics, Vol.10. No.2. pp. 111-123, 1995
5. N. Jankovic et al., An Advance Physics-Based Sub-Circuit Model of IGBT, IEEEE International Symposium on Industrial Electronics, Vol. 1, Montreal, Que, 2006 , pp. 447 - 452
6. N. Jankovic et al. , Unified Approach in Electro-Thermal Modelling of IGBTs and Power PiN Diodes, Proc. of the 19th International Symposium on Power Semiconductor Devices and ICs, Jeju - Korea, May, 2007
7. S. M. Sze (Editor), Modern Semiconductor Device Physics, John Wiley & Sons, Inc (1998)
8. J. W. Nilsson and J. R. Evans, PSPICE Manual Using Orcad Release 9.2 for Introductory Circuits., NJ: Prentice-Hall, 2002
9. D.B.M. Klaassen, J.W. Slotboom, H.C. de Graaff, Unified Apparent Bandgap Narrowing in n- and p-type Silicon, Solid-State Electronics, vol. 35, pp. 125-129, 1992.
10. th International Conference of Semiconductor Devices and Processes, pp. 23-43, Zurich, 1991.
11. J. Dziwior, W. Schmid, Auger Coefficient for Highly Doped and Highly Excited Silicon, Applied Physics Letters, vol. 33, p.346, 1977.
12. +-p silicon Diode, IEEE Trans. on Electron Devices, vol. 29, pp. 284-291, 1982.
13. N.D. Arora, J.R. Hauser, D.J. Roulson, Electron and Hole Mobilities in Silicon as a Function of Concentration and Temperature, IEEE Transactions on Electron Devices, vol. 29, pp. 292-295, 1982.