메뉴 건너뛰기




Volumn 14, Issue 4, 1999, Pages 615-621

Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS;

EID: 0033154001     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.774197     Document Type: Article
Times cited : (34)

References (32)
  • 1
    • 0020719823 scopus 로고
    • The COMFET - A new high-conductance MOS gated device
    • J. P. Russel et al., "The COMFET - A new high-conductance MOS gated device," Electron Device Lett., vol. EDL-4, p. 63, 1983.
    • (1983) Electron Device Lett. , vol.EDL-4 , pp. 63
    • Russel, J.P.1
  • 2
    • 0021437150 scopus 로고
    • The insulated-gate transistor: A new three-terminal MOS-control led bipolar power device
    • June
    • B. J. Baliga et al., "The insulated-gate transistor: A new three-terminal MOS-control led bipolar power device," IEEE Trans. Electron Devices, vol. ED-31, pp. 821-828, June 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 821-828
    • Baliga, B.J.1
  • 4
    • 33749914293 scopus 로고    scopus 로고
    • A new range of reverse conducting gate-commutated thyristors for high-voltage, medium power applications
    • Trondheim, Norway, Sept. 8-10
    • S. Linder, S. Klaka, M. Frecker, E. Carroll, and H. Zeller, "A new range of reverse conducting gate-commutated thyristors for high-voltage, medium power applications," in Proc. EPE'97 Conf., Trondheim, Norway, Sept. 8-10, 1997, pp. 1.117-1.124.
    • (1997) Proc. EPE'97 Conf.
    • Linder, S.1    Klaka, S.2    Frecker, M.3    Carroll, E.4    Zeller, H.5
  • 5
    • 33749800642 scopus 로고    scopus 로고
    • A new high power device: GCT thyristor
    • Trondheim, Norway, Sept. 8-10
    • T. Nakagawa, K. Satoh, and M. Yamamoto "A new high power device: GCT thyristor," in Proc. EPE'97 Conf., Trondheim, Norway, Sept. 8-10, 1997, pp. 2.070-2.075.
    • (1997) Proc. EPE'97 Conf.
    • Nakagawa, T.1    Satoh, K.2    Yamamoto, M.3
  • 6
    • 0030658211 scopus 로고    scopus 로고
    • Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications
    • H. Brunner, M. Hierholzer, T. Laska, and A. Porst, "Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications," in Proc. ISPSD Conf., 1997, pp. 225-228.
    • (1997) Proc. ISPSD Conf. , pp. 225-228
    • Brunner, H.1    Hierholzer, M.2    Laska, T.3    Porst, A.4
  • 7
    • 0031629473 scopus 로고    scopus 로고
    • High turn-off current capability of parallel-connected 4.5kV trench-IEGT's
    • T. Ogura, K. Sugiyama, S. Hasegawa, H. Matsuda, and H. Ohashi, "High turn-off current capability of parallel-connected 4.5kV trench-IEGT's," in Proc. ISPSD Conf., 1998, pp. 47-50.
    • (1998) Proc. ISPSD Conf. , pp. 47-50
    • Ogura, T.1    Sugiyama, K.2    Hasegawa, S.3    Matsuda, H.4    Ohashi, H.5
  • 8
    • 0031145128 scopus 로고    scopus 로고
    • Optimization of the anti-parallel diode in an IGBT module for hard-switching applications
    • May
    • S. Pendharkar and K. Shenai, "Optimization of the anti-parallel diode in an IGBT module for hard-switching applications," IEEE Trans. Electron Devices, vol. 44, pp. 879-886, May 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 879-886
    • Pendharkar, S.1    Shenai, K.2
  • 9
    • 0030151921 scopus 로고    scopus 로고
    • Power bipolar transistors with a fast recovery integrated diode
    • May
    • S. Coffa, A. Magri, F. Frisina, and V. Privitera, "Power bipolar transistors with a fast recovery integrated diode," IEEE Trans. Electron Devices, vol. 43, pp. 836-839, May 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 836-839
    • Coffa, S.1    Magri, A.2    Frisina, F.3    Privitera, V.4
  • 10
    • 0023422084 scopus 로고
    • Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier
    • B. J. Baliga, "Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier," Electron Device Lett., vol. EDL-8, no. 9, 1987.
    • (1987) Electron Device Lett. , vol.EDL-8 , Issue.9
    • Baliga, B.J.1
  • 11
    • 0003687413 scopus 로고    scopus 로고
    • Switching behavior of diodes based on new semiconductor materials and silicon - A comparative study
    • Trondheim, Norway, Sept.
    • M. Bruckmann, E. Baudelot, B. Weis, and H. Mitlhener, "Switching behavior of diodes based on new semiconductor materials and silicon - A comparative study," in Proc. EPE'97, Trondheim, Norway, Sept. 1997, pp. 1513-1517.
    • (1997) Proc. EPE'97 , pp. 1513-1517
    • Bruckmann, M.1    Baudelot, E.2    Weis, B.3    Mitlhener, H.4
  • 12
    • 0017504430 scopus 로고
    • Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifier
    • B. J. Baliga and E. Sun, "Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifier," IEEE Trans. Electron Devicea, vol. ED-24, pp. 685-688, 1977.
    • (1977) IEEE Trans. Electron Devicea , vol.ED-24 , pp. 685-688
    • Baliga, B.J.1    Sun, E.2
  • 14
    • 0030674985 scopus 로고    scopus 로고
    • Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)
    • A. Porst, F. Auerbach, H. Brunner, G. Deboy, and F. Mille, "Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)," in Proc. ISPSD Conf., 1997, pp. 213-216.
    • (1997) Proc. ISPSD Conf. , pp. 213-216
    • Porst, A.1    Auerbach, F.2    Brunner, H.3    Deboy, G.4    Mille, F.5
  • 15
    • 0012376032 scopus 로고    scopus 로고
    • Optimization of the reverse recovery behavior of fast power diodes using injection efficiency and lifetime control techniques
    • Trondheim, Norway
    • M. T. Rahimo and N. Y. A. Shammas, "Optimization of the reverse recovery behavior of fast power diodes using injection efficiency and lifetime control techniques," in Proc. EPE Conf., Trondheim, Norway, 1997, pp. 1099-2104.
    • (1997) Proc. EPE Conf. , pp. 1099-2104
    • Rahimo, M.T.1    Shammas, N.Y.A.2
  • 16
    • 0021482589 scopus 로고
    • High-speed low-loss p-n diode having a channel structure
    • Sept.
    • Y. Shimizu, M. Naito, S. Murakami, and Y. Terasawa, "High-speed low-loss p-n diode having a channel structure," IEEE Trans. Electron Devices, vol. ED-31, pp. 1314-1319, Sept. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1314-1319
    • Shimizu, Y.1    Naito, M.2    Murakami, S.3    Terasawa, Y.4
  • 17
    • 0345101272 scopus 로고    scopus 로고
    • Fast power diodes fabricated on silicon to silicon direct bonded (SDB) material
    • Sevilla, Spain
    • R. Wiget, M. Tzvetkova, and E. P. Burte, "Fast power diodes fabricated on silicon to silicon direct bonded (SDB) material," in Proc. EPE Conf., Sevilla, Spain, pp. 1588-1593.
    • Proc. EPE Conf. , pp. 1588-1593
    • Wiget, R.1    Tzvetkova, M.2    Burte, E.P.3
  • 18
    • 0024702631 scopus 로고
    • Improved recovery of fast power diodes with self-adjusting p emitter efficiency
    • July
    • H. Schlangenotto, J. Serafin, F. Sawitzki, and H. Maeder, "Improved recovery of fast power diodes with self-adjusting p emitter efficiency," Electron Device Lett., vol. 10, pp. 322-324, July 1989.
    • (1989) Electron Device Lett. , vol.10 , pp. 322-324
    • Schlangenotto, H.1    Serafin, J.2    Sawitzki, F.3    Maeder, H.4
  • 19
    • 0027838250 scopus 로고
    • A hybrid fast power diode with strongly improved reverse recovery
    • H. Schlangenotto and M. Fullmann, "A hybrid fast power diode with strongly improved reverse recovery," in Proc. EPE Conf., 1993, pp. 185-190.
    • (1993) Proc. EPE Conf. , pp. 185-190
    • Schlangenotto, H.1    Fullmann, M.2
  • 20
    • 0031192180 scopus 로고    scopus 로고
    • Innovative localized lifetime control in high-speed IGBT's
    • July
    • M. Saggio, V. Raineri, R. Letor, and F. Frisina, "Innovative localized lifetime control in high-speed IGBT's," Electron Device Lett., vol. 18, pp. 333-335, July 1997.
    • (1997) Electron Device Lett. , vol.18 , pp. 333-335
    • Saggio, M.1    Raineri, V.2    Letor, R.3    Frisina, F.4
  • 21
    • 0022811529 scopus 로고
    • Localized lifetime control in insulated-gate transistors by proton implantation
    • Nov.
    • A. Mogro-Campero, R. P. Love, M. F. Chang, and R. Dyer, "Localized lifetime control in insulated-gate transistors by proton implantation," IEEE Trans. Electron Devices, vol. ED-33, pp. 1667-1671, Nov. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1667-1671
    • Mogro-Campero, A.1    Love, R.P.2    Chang, M.F.3    Dyer, R.4
  • 22
    • 0030702464 scopus 로고    scopus 로고
    • Increasing the switching speed of high-voltage IGBT's
    • F. Robb, I. Wan, and S. Yu, "Increasing the switching speed of high-voltage IGBT's," in Proc. ISPSD Conf., 1997, pp. 251-254.
    • (1997) Proc. ISPSD Conf. , pp. 251-254
    • Robb, F.1    Wan, I.2    Yu, S.3
  • 24
    • 0027542615 scopus 로고
    • Multiple proton energy irradiation for improved GTO thyristors
    • A. Hallen, M. Bakowski, and M. Lundqvist, "Multiple proton energy irradiation for improved GTO thyristors," Solid-State Electron., vol. 36, no. 2, pp. 133-141, 1993.
    • (1993) Solid-State Electron. , vol.36 , Issue.2 , pp. 133-141
    • Hallen, A.1    Bakowski, M.2    Lundqvist, M.3
  • 25
    • 0001044615 scopus 로고    scopus 로고
    • Lifetime control in silicon devices by voids induced by He ion implantation
    • V. Raineri, G. Fallica, and S. Libertine, "Lifetime control in silicon devices by voids induced by He ion implantation," J. Appl. Phys, vol. 79, no. 12, 1996.
    • (1996) J. Appl. Phys , vol.79 , Issue.12
    • Raineri, V.1    Fallica, G.2    Libertine, S.3
  • 26
    • 0029714043 scopus 로고    scopus 로고
    • Future trends in local lifetime control
    • J. Vobecky and P. Hazdra, "Future trends in local lifetime control," in Proc. ISPSD Conf., 1996, pp. 161-164.
    • (1996) Proc. ISPSD Conf. , pp. 161-164
    • Vobecky, J.1    Hazdra, P.2
  • 27
    • 0029721711 scopus 로고    scopus 로고
    • Optimized lifetime control for the superior IGBT's
    • Y. Konishi, Y. Onishi, and K. Sakurai, "Optimized lifetime control for the superior IGBT's," in Proc. ISPSD Conf., 1996, pp. 335-338.
    • (1996) Proc. ISPSD Conf. , pp. 335-338
    • Konishi, Y.1    Onishi, Y.2    Sakurai, K.3
  • 28
    • 0027831153 scopus 로고
    • Design considerations for fast soft reverse recovery diodes
    • V. Benda, "Design considerations for fast soft reverse recovery diodes," in Proc. EPE Conf., 1993, pp. 288-292.
    • (1993) Proc. EPE Conf. , pp. 288-292
    • Benda, V.1
  • 29
    • 0020781110 scopus 로고
    • Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop
    • July
    • V. A. K. Temple and F. W. Holroyd, "Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop," IEEE Trans. Electron Devices, vol. ED-30, pp. 782-790, July 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 782-790
    • Temple, V.A.K.1    Holroyd, F.W.2
  • 30
    • 0003351715 scopus 로고    scopus 로고
    • Axial recombination centre technology for freewheeling diodes
    • Trondheim, Norway
    • J. Lutz, "Axial recombination centre technology for freewheeling diodes," in Proc. EPE Conf., Trondheim, Norway, 1997, pp. 1502-1506.
    • (1997) Proc. EPE Conf. , pp. 1502-1506
    • Lutz, J.1
  • 31
    • 0030378203 scopus 로고    scopus 로고
    • Optimization of power diode characteristic by means of ion irradiation
    • Dec.
    • J. Vobecky, P. Hazdra, and J. Homola, "Optimization of power diode characteristic by means of ion irradiation," IEEE Trans. Electron Devices, vol. 43, pp. 2283-2289, Dec. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2283-2289
    • Vobecky, J.1    Hazdra, P.2    Homola, J.3
  • 32
    • 0005366672 scopus 로고
    • Technology Modeling Associates, Inc., Palo Alto, CA
    • MEDICI User Guide, Technology Modeling Associates, Inc., Palo Alto, CA, 1993.
    • (1993) MEDICI User Guide


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.