A mass-production compatible capacitor technology for DRAMs with design rule down to 20 nm

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 625-648

  Choi, Gyu Jin ^a   Kim, Seong Keun ^a,b   Han, Jeong Hwan ^a   Lee, Sang Woon ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL STRUCTURE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; ENTERTAINMENT INDUSTRY; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; NITRIDES; OXIDE MINERALS; SEMICONDUCTOR DOPING; SILICA; SILICON NITRIDE; TITANIUM DIOXIDE;

CAPACITOR DIELECTRICS; DOUBLE LAYER ELECTRODE; DYNAMIC RANDOM ACCESS MEMORY; ELECTRICAL PERFORMANCE; EQUIVALENT OXIDE THICKNESS; FILM PROPERTIES; PHASE FORMATIONS; PROCESS CONDITION;

RUTHENIUM;

EID: 76549102235     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122121     Document Type: Conference Paper

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