Al2O3-incorporation effect on the band structure of Ba0.5Sr0.5TiO3 thin films

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Zheng, Y B ^a   Wang, S J ^a   Huan, A C H ^b   Tan, C Y ^b   Yan, L ^b   Ong, C K ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; BARIUM COMPOUNDS; CARRIER CONCENTRATION; DIELECTRIC LOSSES; DYNAMIC RANDOM ACCESS STORAGE; LATTICE CONSTANTS; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROPHOTOMETERS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAPS; OPTICAL TRANSMISSION SPECTRA; OXYGEN VACANCY; PEAK FITTING;

THIN FILMS;

EID: 17944364804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1883712     Document Type: Article

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