Dimethylgallium isopropoxide as a new volatile source for ALD and MOCVD of Ga2O3

ECS Transactions

Volumn 25, Issue 8 PART 1, 2009, Pages 587-592

  Lee, H ^a   Kim, K ^a   Woo, J J ^a   Jun, D J ^a   Park, Y ^a   Kim, Y ^a   Lee, H W ^b   Cho, Y J ^b   Cho, H M ^b  

^a Korea University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM SOURCE; ISO-PROPOXIDE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; OXYGEN SOURCES; REACTING GAS; ROOM TEMPERATURE; TEMPERATURE RANGE; TEMPERATURE WINDOW;

AMORPHOUS FILMS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; OXYGEN;

VAPOR DEPOSITION;

EID: 76549093885     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207644     Document Type: Conference Paper

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