Chemical vapor deposition of zinc gallate using a novel single precursor

Journal De Physique. IV : JP

Volumn 9 pt 2, Issue 8, 1999, Pages

  Kim, C G ^a   Koh, W ^a   Ku, S J ^a   Nah, E J ^a   Yu, K S ^a   Kim, Y ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; INORGANIC COMPOUNDS; PRESSURE; SOLIDS; TEMPERATURE; THERMAL EFFECTS; THIN FILMS; VAPOR PRESSURE; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EMISSION DISPLAY; LOW MELTING POINT; LOW VOLTAGE PHOSPHOR MATERIAL; NOVEL SINGLE PRECURSOR; ZINC GALLATE;

ZINC COMPOUNDS;

EID: 0033187955     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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