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Volumn 96, Issue 5, 2010, Pages

Effect of boron on interstitial-related luminescence centers in silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BORON CONCENTRATIONS; DELETERIOUS EFFECTS; EXTENDED DEFECT; INITIAL STAGES; INTERSTITIAL CLUSTERS; LOWER ENERGIES; LUMINESCENCE BAND; LUMINESCENCE CENTERS; OPTICALLY ACTIVE DEFECTS; P-TYPE SILICON; PHOTOLUMINESCENCE MEASUREMENTS;

EID: 76449120004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3300836     Document Type: Article
Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.