Multiple negative resistances in trenched structures bridged with carbon nanotubes

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Dragoman, M ^a   Konstantinidis, G ^b   Kostopoulos, A ^b   Dragoman, D ^c   Neculoiu, D ^d   Buiculescu, R ^e   Plana, R ^f   Coccetti, F ^f   Hartnagel, H ^g  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c UNIVERSITY OF BUCHAREST   (Romania)

^d UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^e UNIVERSITY OF CRETE   (Greece)

^f LAAS CNRS   (France)

^g DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; MESFET DEVICES; NANOPORES; NANOSTRUCTURES; NANOTUBES; NEGATIVE RESISTANCE; OPTICAL DESIGN;

APPLIED VOLTAGES; FIELD EFFECT TRANSISTOR (FET); GAAS SUBSTRATES; MAXIMUM STABLE GAIN; NORMAL PRESSURE; QUASI-LINEAR; ROOM TEMPERATURES; S-SHAPED;

CARBON NANOTUBES;

EID: 49149127946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963367     Document Type: Article

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