Investigation of dalta-doped quantum wells for power FET applications

Superlattices and Microstructures

Volumn 23, Issue 2, 1998, Pages 187-190

  Roberts, J M ^a   Harris, J J ^a   Woods, N J ^b   Hopkinson, M ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

111 V semiconductors; Electon transport; FETs; Quantum wells

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SATURATION DRIFT VELOCITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031649730     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0242     Document Type: Article

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