A novel GaAs FET with double camel-like gate structure

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 429-431

  Tsai, Jung Hui ^a  

^a NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Camel like gate; Field effect transistor; GaAs; Potential barrier height; Turn on voltage

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CAMEL-LIKE GATE; POTENTIAL BARRIER HEIGHT; TURN-ON VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 22944441603     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851039     Document Type: Article

References (11)

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