On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 307-311

  Chang, Wen Lung ^a   Cheng, Shiou Ying ^a   Shie, Yung Hsin ^a   Pan, Hsi Jen ^a   Lour, Wen Shiung ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CAMEL-TYPE FIELD-EFFECT TRANSISTOR (CAMFET); GALLIUM INDIUM PHOSPHIDE;

FIELD EFFECT TRANSISTORS;

EID: 0032667214     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/003     Document Type: Article

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