Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 146-149

  Tsai, Jung Hui ^a   Li, Chien Ming ^a  

^a NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Complementary; Doped channel HFET; InGaP InGaAs; Noise margin; Pseudomorphic; Saturation voltage

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INVERTERS; ELECTRIC POTENTIAL; ELECTRON GAS; INDIUM COMPOUNDS; TRANSCONDUCTANCE;

COMPLEMENTARY; DOPED-CHANNEL HFET; INGAP/INGAAS; NOISE MARGIN; PSEUDOMORPHIC; SATURATION VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 36248942529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.05.022     Document Type: Article

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