Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET

Electronics Letters

Volumn 34, Issue 1, 1998, Pages 126-128

  Kim, H J ^a   Kim, S H ^a   Lee, J I ^a   Kang, K N ^a   Kim, D M ^b   Cho, K ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Kookmin University   (South Korea)

^c Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); OPTICAL RESPONSES; PHOTOCURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0032495418     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980009     Document Type: Article

References (3)

1. ARAFA, M., FAY, P., ISMAIL, K., CHU, J.O., MEYERSON, B.S., and ADESIDA, I.: 'High speed p-type SiGe modulation-doped field-effect transistors', IEEE Electron Device Lett., 1996, 17, (3), pp. 124-126
2. HERCZFELD, P.R.: 'Chip level integration of microwave and photonic devices'. European Microw. Conf. Proc., 1994, pp. 3-8
3. SINGHAL, A., MISHRA, A., and CHAKRABARTI, P.: Optical effects in modulation-doped-field-effect-transistor', Solid-State Electron., 1990, 33, (9), pp. 1214-1216