Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1181-1186

  Kao, Ming Jer ^a   Shieh, Hir Ming ^b   Hsu, Wei Chou ^a   Lin, Ticn Yih ^b   Wu, Yue Huei ^a   Hsu, Rong Tay ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTOLITHOGRAPHY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HALL MEASUREMENT; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY CONTACT;

FIELD EFFECT TRANSISTORS;

EID: 0030214299     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506766     Document Type: Article

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