Unified retention model for localized charge trapping nonvolatile memory device

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Shapira, Asia ^a   Shur, Yael ^a   Shacham Diamand, Yosi ^a   Shappir, Assaf ^b   Eitan, Boaz ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b Saifun Semiconductors Ltd   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; COMPUTER SIMULATION; MATHEMATICAL MODELS; ROM;

LOCALIZED CHARGE TRAPPING NONVOLATILE MEMORY DEVICE; UNIFIED RETENTION MODEL;

DATA STORAGE EQUIPMENT;

EID: 41649121470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2906895     Document Type: Article

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