Cycling endurance of silicon-oxide-nitride-oxide-silicon nonvolatile memory stacks prepared with nitrided SiO2/Si(100) interfaces

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1122-1124

  Habermehl, S ^a   Nasby, R D ^a   Rightley, M J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042494614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124616     Document Type: Article

References (13)

1. P. J. McWhorter, S. L. Miller, and T. A. Dellin, IEEE Trans. Nucl. Sci. NS-33, 1414 (1986).
2. E. S. Snyder, P. J. McWhorter, T. A. Dellin, and J. D. Sweetman, IEEE Trans. Nucl. Sci. NS-36, 2131 (1989).
3. N. S. Saks, D. I. Ma, D. M. Fleetwood, and M. E. Twigg, in Proceedings of the ECS Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by V. Kapoor (Electrochemical Society, New York, 1994).
4. S. Singvhi and C. G. Takoudis, J. Appl. Phys. 82, 442 (1997).
5. N. S. Saks, D. I. Ma, and W. B. Fowler, Appl. Phys. Lett. 63, 374 (1995).
6. S. Minami and Y. Kamigaki, IEEE Trans. Electron Devices 40, 2011 (1993).
7. P. S. Winokur, in Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorpher (Wiley, New York, 1998), pp. 206-208.
8. J. Robertson, in Amorphous Insulating Thin Films, edited by J. Kaniki, W. L. Warren, R. A. B. Devine, and M. Matsumura (Materials Research Society, Pittsburgh, PA, 1993), p. 65.
9. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996).
10. C. G. Van de Walle, J. Vac. Sci. Technol. A 16, 1767 (1998).
11. V. A. Gritsenko, in Silicon Nitride in Electronics, edited by V. I. Belyi (Elsevier, New York, 1988), p. 162.
12. E. Kooi, J. G. van Lierop, and J. A. Appels, J. Electrochem. Soc. 123, 1117 (1976).
13. F. H. P. M. Habraken and A. E. T. Kuiper, Mater. Sci. Eng., R. 12, 123 (1994).