Impact of oxygen incorporation at the Si3N4/Al 2O3 interface on retention characteristics for nonvolatile memory applications

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Chang, Man ^a   Ju, Yongkyu ^a   Lee, Joonmyoung ^a   Jung, Seungjae ^a   Choi, Hyejung ^a   Jo, Minseok ^a   Jeon, Sanghun ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; OXYGEN;

OXYGEN INCORPORATION;

SILICON;

EID: 47849086023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957668     Document Type: Article

References (15)

1. C. H. Lee, K. I. Choi, M. K. Cho, Y. H. Song, K. C. Park, and K. Kim, Tech. Dig.-Int. Electron Devices Meet. 2003, 26.5.1.
2. Ch.-H. Lee, S.-H. Hur, Y.-Ch. Shin, J.-Ch. Choi, D.-G. Park, and K. Kim, Appl. Phys. Lett. 86, 152908 (2005).
3. X. W. Wang, S. I. Shim, and T. P. Ma, Proceeding of the 38th Semiconductor Interface Specialists Conference, 2007 (unpublished).
4. M. Lisiansky, A. Heiman, M. Kovler, A. Fenigstein, Y. Roizin, I. Levin, A. Gladkikh, M. Oksman, R. Edrei, A. Hoffman, Y. Shnieder, and T. Claasen, Appl. Phys. Lett. 89, 153506 (2006).
5. S.-C. Lai, H.-T. Lue, J.-Y. Hsieh, M.-J. Yang, Y.-K. Chiou, C.-W. Wu, T.-B. Wu, G.-L. Luo, C.-H. Chien, E.-K. Lai, K.-Y. Hsieh, R. Liu, and C.-U. Lu, IEEE Electron Device Lett. 28, 643 (2007).
6. M. Chang, M. Hasan, S. Jung, H. Park, M. Jo, H. Choi, and H. Hwang, Appl. Phys. Lett. 91, 192111 (2007).
7. H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young, and H. Hwang, IEEE Electron Device Lett. 26, 725 (2005).
8. J. Avila and J. L. Sacedon, Appl. Phys. Lett. 66, 757 (1995).
9. J. B. Kim, D. R. Kwon, K. Chakrabarti, C. Lee, K. Y. Oh, and J. H. Lee, J. Appl. Phys. 92, 6739 (2002).
10. Y. Fujisaki, K. Iseki, H. Ishiwara, M. Mao, and R. Bubber, Appl. Phys. Lett. 82, 3931 (2003).
11. M.-H. Cho, Y. S. Rho, H.-J. Choi, S. W. Nam, D.-H. Ko, J. H. Ku, H. C. Kang, D. Y. Noh, C. N. Whang, and K. Jeong, J. Vac. Sci. Technol. A 20, 865 (2002).
12. S. Guha, E. P. Gusev, H. Okorn-Schmidt, M. Copel, L.-Å. Ragnarsson, N. A. Bojarczuk, and P. Ronsheim, Appl. Phys. Lett. 81, 2956 (2002).
13. T. M. Klein, D. Niu, W. S. Epling, W. Ki, D. M. Maher, C. C. Hobbs, R. I. Hegde, I. J. R. Baumvol, and G. N. Parsons, Appl. Phys. Lett. 75, 4001 (1999).
14. M. Specht, M. Stadele, S. Jakschik, and U. Schroder, Appl. Phys. Lett. 84, 3076 (2004).
15. S. Jakschik, A. Avellan, U. Schroeder, and J. W. Bartha, IEEE Electron Device Lett. 51, 2252 (2004).