Low-frequency and microwave performances of laser-ablated epitaxial Na0.5K0.5NbO3 films on high-resistivity SiO2/Si substrates

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2267-2276

  Abadei, S ^a   Gevorgian, S ^a,b   Cho, C R ^c   Grishin, A ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Ericsson Microwave Systems AB   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE CHANGE; DC BIAS; DC FIELD; DEPLETION-LAYER THICKNESS; ELECTRICALLY TUNABLE; GOLD ELECTRODES; INTERDIGITAL; LOW FREQUENCY; METAL DIELECTRIC SEMICONDUCTORS; MICROWAVE PERFORMANCE; Q-FACTORS; SLOT WIDTH; STRUCTURE PERFORMANCE; TEMPERATURE INTERVALS; TOP SURFACE; VOLTAGE DEPENDENCE;

CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRODES; EPITAXIAL GROWTH; NIOBIUM OXIDE; PHOTOLITHOGRAPHY; SEMICONDUCTOR LASERS; SILICON; SILICON OXIDES; SODIUM;

EPITAXIAL FILMS;

EID: 33845463982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430545     Document Type: Article

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