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Volumn 157, Issue 3, 2010, Pages

Ultrahigh selective etching of SiO2 using an amorphous carbon mask in dual-frequency capacitively coupled C4 F8 / CH2 F2 / O2 /Ar Plasmas

(4) Kwon, B S a Kim, J S a Lee, N E a Shon, J W b

a Sungkyunkwan University (South Korea)

b Jusung Engineering Company Limited (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON LAYER; ANTI REFLECTIVE COATINGS; AR PLASMAS; CAPACITIVELY COUPLED; CAPACITIVELY COUPLED PLASMAS; DEGREE OF POLYMERIZATION; DUAL FREQUENCY; ETCH MASK; ETCH SELECTIVITY; FLOW RATIOS; GAS-FLOW RATIO; HIGH ASPECT RATIO; HIGH FREQUENCY POWER; LOW FREQUENCY POWER; PROCESS PARAMETERS; PROCESS WINDOW; PROCESSING WINDOWS; SELECTIVE ETCHING; SILICON DIOXIDE; SILICON DIOXIDE LAYERS; STACKED STRUCTURE; DUAL FREQUENCY SUPERIMPOSED; PHYSICAL VAPOR DEPOSITED;

AMORPHOUS CARBON; ASPECT RATIO; ETCHING; INDUCTIVELY COUPLED PLASMA; SILICA; SILICON OXIDES; WINDOWS; CARBON; FLOW OF GASES; PHOTORESISTS;

AMORPHOUS SILICON;

EID: 76349116307 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3275710 Document Type: Article

Times cited : (41)

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