Investigations of niobium carbide contact for carbon-nanotube-based devices

Nanotechnology

Volumn 21, Issue 9, 2010, Pages

  Huang, L ^a   Chor, E F ^a   Wu, Y ^a   Guo, Z ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING IN VACUUM; GOOD STABILITY; LARGE-DIAMETER; NANOTUBE-BASED DEVICES; NIOBIUM CARBIDE; ON CURRENTS; P-TYPE; SCHOTTKY BARRIER HEIGHTS; SMALL-DIAMETER; SUBTHRESHOLD SLOPE; FIELD EFFECT TRANSISTOR (FETS); P-TYPE TRANSPORTS; SINGLEWALLED CARBON NANOTUBE (SWCNT); TITANIUM CARBIDES (TIC);

CARBON NANOTUBES; CESIUM; ELECTRIC CONTACTORS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NIOBIUM; OHMIC CONTACTS; PALLADIUM; SCHOTTKY BARRIER DIODES; TEMPERATURE INDICATING CAMERAS; TITANIUM; TITANIUM CARBIDE; WORK FUNCTION; CARBON; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; YARN;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 76249090574     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/9/095201     Document Type: Article

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