Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

Journal of Materials Research

Volumn 14, Issue 9, 1999, Pages 3525-3529

  Craciun, Valentin ^a,d   Boyd, Ian W ^a   Perriere, Jacques ^b   Hutton, Bernie ^a   Nicholls, Edward J ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITÉ PARIS DESCARTES   (France)

^c UNIVERSITY OF HULL   (United Kingdom)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDATION; POROUS MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

SILICON GERMANIDE;

SEMICONDUCTING FILMS;

EID: 0032595559     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0477     Document Type: Article

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