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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 PART A, 1998, Pages

Direct oxidation of si1-xGex layers using vacuum-ultra-violet light radiation in oxygen

(5) Chen, Liang Po a Chan, Yuen Chang b Chang, Shoou Jinn b Huang, Guo Wei c Chang, Chun Yen c

a NATIONAL NANO DEVICE LABORATORIES (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Auger profile; Photo CVD; SiGe; VUV; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OXIDATION; OXYGEN; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

DIRECT PHOTO CHEMICAL VAPOR DEPOSITION (CVD); SILICON GERMANIDE; VACUUM ULTRAVIOLET (VUV) RADIATION;

SEMICONDUCTING FILMS;

EID: 0031998102 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l122 Document Type: Article

Times cited : (15)

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