Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Di, Zengfeng ^a,b   Chu, Paul K ^a   Zhang, Miao ^b   Liu, Weili ^b   Song, Zhitang ^b   Lin, Chenglu ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED-OXIDE (BOX); SIGE-ON-INSULATOR (SGOI); THERMAL OXIDES; ULTRATHIN LAYERS;

CHEMICAL MODIFICATION; CONDENSATION; DIFFUSION; GERMANIUM; INTERFACES (MATERIALS); SUBSTRATES; THERMAL EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 20444478646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1857060     Document Type: Article

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