Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after Si+ ion implantation

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1745-1747

  Hollander B ^a   Buca, D ^a   Morschbacher M ^a   Lenk, St ^a   Mantl, S ^a   Herzog, H J ^b   Hackbarth, Th ^b   Loo, R ^c   Caymax, M ^c   Fichtner, P F P ^d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b DAIMLER AG   (Germany)

^c IMEC   (Belgium)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HELIUM; HETEROJUNCTIONS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPY (XTEM); ION CHANNELING; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); STRAIN RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4143074849     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1765851     Document Type: Article

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