Dry thermal oxidation of a graded SiGe layer

Applied Physics Letters

Volumn 79, Issue 22, 2001, Pages 3606-

  Lim, Y S ^a   Jeong, J S ^a   Lee, J Y ^a   Kim, H S ^b   Shon, H K ^c   Kim, H K ^d   Moon, D W ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Chungbuk National University   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035956159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415373     Document Type: Article

References (0)