Growth of Si wires on a Si(111) substrate under ultrahigh vacuum condition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 237-239

  Park, H D ^a   Hogan, T P ^a  

^a Michigan State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; GOLD; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; ULTRAHIGH VACUUM;

NANOWIRES; VAPOR-LIQUID-SOLID (VLS) MECHANISMS;

SEMICONDUCTOR GROWTH;

EID: 1642276766     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1643401     Document Type: Conference Paper

References (23)

1. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem. B 104, 5213 (2000).
2. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature (London) 409, 66 (2001).
3. Y. Cui and C. M. Lieber, Science 291, 851 (2001).
4. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
5. E. I. Givargizov, A. N. Stephanova, L. N. Obolenskaya, E. S. Mashkova, V. A. Molchanov, M. E. Givargizov, and I. W. Rangelow, Ultramicroscopy 82, 57 (2000).
6. E. I. Givargizov, in Current Topics in Materials Science, edited by E. Kaldid (North-Holland, Amsterdam, 1978), Vol. 1, Chap. 3.
7. J. Hu, T. W. Odom, and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
8. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, Phys. Status Solidi A 165, 37 (1998).
9. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
10. V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. 76, 3555 (2000).
11. X. Duan and C. M. Lieber, Adv. Mater. (Weinheim, Ger.) 12, 298 (2000).
12. C. C. Chen and C. C. Yeh, Adv. Mater. (Weinheim, Ger.) 12, 738 (2000).
13. A. J. Barcz, J. Appl. Phys. 74, 3172 (1993).
14. K. Haraguchi, K. Hiruma, K. Hosomi, M. Shirai, and T. Katsuyama, J. Vac. Sci. Technol. B 15, 1685 (1997).
15. B. V. Derjaguin, D. V. Fedoseev, V. M. Lukyanovich, B. V. Spitzin, V. A. Ryabov, and A. V. Lavrentyev, J. Cryst. Growth 2, 380 (1968).
16. G. Lelay, Surf. Sci. 132, 169 (1983).
17. J. Li, W. Yang, and T. Tan, J. Appl. Phys. 71, 1 (1992).
18. L. H. Allen, J. R. Phillips, D. Theodore, C. Carter, R. Soave, J. W. Mayer, and G. Ottaviani, Phys. Rev. B 41, 8203 (1990).
19. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, J. Vac. Sci. Technol. B 15, 554 (1997).
20. J. R. Arthur and R. S. Wagner, U.S. Patent No. 3, 505, 127 (1970).
21. E. I. Givargizov, J. Cryst. Growth 31, 20 (1975).
22. Y. Cui, L. J. Lauhon, M. S. Gudiksen, J. Wang, and C. Lieber, Appl. Phys. Lett. 78, 2214 (2001).
23. J. L. Liu, S. J. Cai, L. Lin, and K. L. Wang, Electrochem. Solid-State Lett. 1, 188 (1998).