Comparison of efficiency and kinetics of phosphorus-diffusion and aluminum gettering of metal impurities in silicon: A simulation study

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 229-234

  Falkenberg, M A ^a   Abdelbarey, D ^a   Kveder, V V ^b   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

Aluminum gettering; Phosphorus diffusion gettering; Simulations; Solar cells

Indexed keywords

ALUMINUM; CRYSTALLINE MATERIALS; DEFECTS; DIFFUSION; DISSOLUTION; IMPURITIES; METALS; PHOSPHORUS; PRECIPITATES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SOLAR CELLS; ALUMINUM COMPOUNDS; EFFICIENCY; IRON; KINETICS; SILICON; SILICON COMPOUNDS;

ALUMINUM GETTERING; CONCENTRATION OF; CRYSTALLINE SILICON MATERIALS; CRYSTALLINE SILICONS; DISSOLVED METALS; FURTHER DEVELOPMENT; GETTERING; GETTERING PROCESS; HIGH TEMPERATURE; IN-DIFFUSION; LIMITING FACTORS; LOW TEMPERATURES; METAL IMPURITIES; PHOSPHORUS DIFFUSION; PHYSICS-BASED SIMULATION; PRECIPITATE DISSOLUTION; QUANTITATIVE SIMULATION; SEGREGATION COEFFICIENTS; SIMULATION STUDIES; SIMULATIONS; SOLAR CELL PROCESSING; TWO-REGIME;

METAL RECOVERY; SOLAR CELLS;

EID: 75849148915     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.229     Document Type: Conference Paper

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