Gettering of metallic impurities in photovoltaic silicon

Applied Physics A: Materials Science and Processing

Volumn 64, Issue 2, 1997, Pages 127-137

  McHugo, S A ^a   Hiesimair, H ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); IMPURITIES; INTEGRATED CIRCUITS; PHOSPHORUS; PHOTOVOLTAIC CELLS; SEGREGATION (METALLOGRAPHY);

INTEGRATED CIRCUIT GRADE SILICON; PHOTOVOLTAIC SILICON;

SEMICONDUCTING SILICON;

EID: 0031069108     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050453     Document Type: Article

References (50)

1. L. Jastrzebski, W. Henley, D. Schielein, J. Lagowski: J. Elec. Chem. Soc. 142, 3869 (1994)
2. J. Bailey, E.R. Weber: Phys. Stat. Sol. (a) 137, 515 (1993)
3. S.A. McHugo, J. Bailey, H. Hieslmair, E.R. Weber: In 1994 First World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, U.S.A., 1994, p. 1607
4. S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, F. Allegretti, S. Torchio, G. Fabbri, G.P. Ottaviani, F. Demartin, A. Fusi: J. Elec. Chem. Soc. 135, 155 (1988)
5. B.L. Sopori, L. Jastrzebski, T. Tan, S. Narayanan: In Proceedings of the 12th European Photovoltaic Solar Energy Conference, Netherlands, 1994, p. 1003
6. H. Alexander, C. Kisielowski-Kemmerich, E.R. Weber: Physica 116B, 583 (1983)
7. E.R. Weber, H. Alexander: Journal de Physique C4, 319 (1983)
8. C. Cabanel, J.Y. Laval, J. Appl. Phys. 67, 1425 (1990)
9. K. Weronek, J. Weber, A. Höpner, F. Ernst, R. Buchner, M. Stefaniak, H. Alexander: In Defects in Semiconductors 16, International Conference on Defects in Semiconductors, edited by G. Davies, G. Deleo and M. Stavola, Lehigh University, U.S.A., 1991, p. 1315
10. V. Higgs, E.C. Lightowlers, C.E. Norman, P. Kightley: In Defects in Semiconductors 16, International Conference on Dejects in Semiconductors, edited by G. Davies, G. Deleo and M. Stavola, Lehigh University, U.S.A., 1991, p. 1309
11. V. Higgs, M. Kittler: Appl. Phys. Lett. 63, 2085 (1993)
12. M. Kittler, W. Seifert V. Higgs: Phys. Stat. Sol. (a) 137, 327 (1993)
13. T.S. Fell, P.R. Wilshaw, M.D.d. Coteau: Phys. Stat. Sol. (a) 138, 695(1993)
14. T.H. Wang, T.F. Ciszek, T. Schuyler: Solar Cells 24, 135 (1988)
15. S.A. McHugo, W.D. Sawyer: Appl. Phys. Lett. 62(20), 2519 (1993)
16. L. Baldi, G.F. Cerofolini, G. Ferla, G. Frigerio: Phys. Stat. Sol. (a) 48, 523 (1978)
17. L. Baldi, G. Cerofolini, G. Ferla: J. Elec. Chem. Soc. 127, 164 (1980)
18. J.S. Kang, D.K. Schroder: J. Appl. Phys. 65, 2974 (1989)
19. W. Schröter, R. Kühnapfel: Appl. Phys. Lett. 56, 2207 (1990)
20. P. Sana, J. Salami, A. Rohatgi: IEEE Transactions on Electron Devices 40, 1461 (1993)
21. M. Loghmarti, R. Stuck, J.C. Muller, D. Sayah, P. Siffert: Appl. Phys. Lett. 62, 979 (1993)
22. E.O. Sveinbjörnsson, O. Engström, U. Södervall: J. Appl. Phys. 73, 7311 (1993)
23. R. Gafiteanu, U. Gösele, T.Y. Tan: Mat. Res. Soc. Symp. Proc. 378, 297 (1995)
24. O. Porre, M. Stemmer, M. Pasquinelli: Materials Science and Engineering B24, 188 (1994)
25. M. Apel, I. Hanke, R. Schindler, W. Schröter: J. Appl. Phys. 76, 4432 (1994)
26. S.M. Joshi, U.M. Gösele, T.Y. Tan: J. Appl. Phys. 77, 3858 (1995)
27. S.A. McHugo, H. Hieslmair, E.R. Weber: In Defects in Semiconductors 18, International Conference on Defects in Semiconductors, edited by M. Suezawa and H. Katayama-Yoshida, Sendai, Japan, 1995, p. 1979
28. E.R. Weber, Appl. Phys. A 30, 1 (1983)
29. E.O. Johnson: J. Appl. Phys. 28, 1349 (1957)
30. A.M. Goodman: J. Appl. Phys. 32, 2550 (1961)
31. J. Lagowski, A.M. Kontkiewicz, L, Jastrzebski, P. Edelman: Appl. Phys. Lett. 63, 2902 (1993)
32. ASTM Annual Book of Standards, (ASTM, Metals Park, OH, 1983), p. 191
33. F.S. Ham: J. Phys. Chem. Solids 6, 335 (1958)
34. D.G. Schimmel: Jour. Electrochem. Soc. 126, 479 (1979)
35. ASTM Annual Book of Standards, (ASTM, Metals Park, OH, 1987), sec. 10, vol. 10/5, p. 63
36. ASTM Annual Book of Standards, (ASTM, Metals Park, OH, 1987), sec. 10, vol. 10/5, p. 620
37. L.C. Kimerling, J.L. Benton: Physica 116B, 297 (1983)
38. G. Zoth, W. Bergholz: J. Appl. Phys. 67, 6764 (1990)
39. H. Baker: In Alloy Phase Diagrams, vol. 3, (ASM International, 1992)
40. P. Villars, A. Prince, H. Okamoto: In Handbook of Ternary Alloy Phase Diagrams, vol. 3, (ASM International, 1995)
41. K. Shimura: Appl. Phys. Lett. 39, 987 (1981)
42. L. Jastrzebski, P. Zanzucchi, D. Thebault, J. Lagowski: J. Elec. Chem. Soc. 129, 1638 (1982)
43. G. Fraundorf, P. Fraundorf, R.A. Craven, R.A. Frederick, J. Moody, R.W. Shaw: J. Elec. Chem. Soc. 132, 1701 (1985)
44. H.D. Chiou: J. Elec. Chem. Soc. 139, 1680 (1992)
45. S. Ishikawa, M. Matsushita, J.-I. Shimomura: In Defects in Semiconductors 18, International Conference on Defects in Semiconductors, edited by M. Suezawa and H. Katayama-Yoshida, Sendai, Japan, 1995, p. 1823
46. W.K. Tice, T.Y. Tan: Mat. Res. Soc. Symp. Proc. 2, 367 (1981)
47. D. Gilles, E.R. Weber, S.K. Hahn: Phys. Rev. Lett. 64, 196 (1990)
48. S.A. McHugo, M. Mizuno, F.G. Kirscht, E.R. Weber: Appl. Phys. Lett. 66, 2840 (1995)
49. K. Mahfoud, M. Loghmarti, J.C. Muller, P. Siffert: Mat. Sci. & Eng. B 36, 63 (1996)
50. B. Shen, T. Sekiguchi, J. Jablonski, K. Sumino: J. Appl. Phys. 76, 4540 (1994)