Comprehensive model for the gettering of lifetime-killing impurities in silicon

Journal of the Electrochemical Society

Volumn 147, Issue 7, 2000, Pages 2685-2692

  Del Cañizo, Carlos ^a   Luque, Antonio ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL IMPURITIES; CRYSTAL LATTICES; MATHEMATICAL MODELS; PHOSPHORUS; POINT DEFECTS;

GETTERING;

SEMICONDUCTING SILICON;

EID: 0034226997     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393590     Document Type: Article

References (38)

1. P. F. Schmidt and C. W. Pearce, J. Electrochem. Soc., 128, 630 (1981).
2. K. Graff, Metal Impurities in Silicon-Device Fabrication, Springer-Verlag, Berlin (1995).
3. T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Lett., 30, 175 (1977).
4. S. Kishino, K. Nagasawa, and T. Iizuka, Jpn. J. Appl. Phys., 19, L466 (1980).
5. L. Baldi, G. Cerofolini, and G. Ferla, J. Electrochem. Soc., 127, 164 (1980).
6. M. L. Polignano, G. F. Cerofolini, H. Bender, and C. Claeys, J. Appl. Phys., 64, 869 (1988).
7. D. Gilles and H. Ewe, in Semiconductor Silicon (1994), H. R. Huff, W. Bergholz, and K. Sumino, Editors, PV 94-10, p. 772, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
8. R. Gafiteanu, U. Gösele, and T. Y. Tan, in Symposium Proceedings, Vol. 378, p. 297, Materials Research Society, Pittsburgh, PA (1995).
9. C. S. Chen and D. K. Schroder, J. Appl. Phys., 71, 5858 (1992).
10. H. Hieslmair, A. A. Istratov, and E. R. Weber, Semicond. Sci. Technol., 13, 1401 (1998).
11. V. Kveder, W. Schröter, A. Sattler, and M. Seibt, Mater. Sci. Eng. B, 71, 175 (2000).
12. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, J. Appl. Phys., 77, 4169 (1995).
13. A. Ourmazd and W. Schröter, Appl. Phys. Lett., 45, 781 (1984).
14. G. B. Bronner and J. D. Plummer, J. Appl. Phys., 61, 5286 (1987).
15. M. Apel, I. Hanke, R. Schindler, and W. Schröter, J. Appl. Phys., 76, 4432 (1994).
16. S. M. Joshi, U. M. Gösele, and T. Y. Tan, J. Appl. Phys., 77, 3858 (1995).
17. W. Schröter and R. Kühnapfel, Appl. Phys. Lett., 56, 2207 (1990).
18. E. Ö. Sveinbjörnsson, O. Engström, and U. Södervall, J. Appl. Phys., 73, 7311 (1993).
19. F. Ham, J. Phys. Chem. Solids, 6, 335 (1958).
20. J. M. Hwang and D. K. Schroder, J. Appl. Phys., 59, 2476 (1986).
21. H. Hieslmair, S. McHugo, and E. R. Weber, in Proceedings of the 25th IEEE Photovoltaic Specialists Conference, IEEE Electron Devices Society, Piscataway, NJ p. 441 (1996).
22. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B, 52, 16542 (1995).
23. A. Luque, A. Moehlecke, R. Lagos, and C. del Cañizo, Phys. Status. Solidi A, 155, 42 (1996).
24. A. Luque, C. del Cañizo, R. Lagos, and A. Moehlecke, Phys. Status. Solid A, 157, 37 (1996).
25. J. S. Kang and D. K. Schroder, J. Appl. Phys., 65, 2974 (1989).
26. S. A. McHugo, H. Hieslmair, and E. R. Weber, Extended Abstracts of the 5th Workshop on the Role of Impurities and Defects in Silicon Device Processing, National Renewable Energy Laboratory, Golden, CO, p. 133 (1995).
27. R. Lagos, A. Moehlecke, J. Alonso, I. Tobías, and A. Luque, in Proceedings of the 1st IEEE World Conference on Photovoltaic Energy Conversion, IEEE Electron Devices Society, Piscataway, NJ, p. 1629 (1994).
28. H. Hieslmair, A. A. Istratov, S. McHugo, C. Flink, T. Heiser, and E. R. Weber, Appl. Phys. Lett., 72, 1460 (1998).
29. W. K. Schubert and J. M. Gee, in Proceedings of the 25th IEEE Photovoltaic Specialist Conference, IEEE Electron Devices Society, Piscataway, NJ, 437 (1996).
30. B. L. Sopori, L. Jastrzebski, and T. Tan, in Proceedings of the 25th IEEE Photovoltaic Specialist Conference, IEEE Electron Devices Society, Piscataway, NJ, p. 625 (1996).
31. P. S. Plekhanov, R. Gafiteanu, U. M. Gösele, and T. Y. Tan, J. Appl. Phys., 86, 2453 (1999).
32. S. Martinuzzi, I. Perichaud, and J. J. Simon, Appl. Phys. Lett., 70, 2744 (1997).
33. S. A. McHugo, J. Bailey, H. Hieslmair, and E. R. Weber, in Proceedings of the 1st IEEE World Conference on Photovoltaic Energy Conversion, IEEE Electron Devices Society, Piscataway, NJ, p. 1607 (1994).
34. S. A. McHugo and M. Imaizumi, in Symposium Proceedings, Vol. 469, Materials Research Society, Pittsburgh, PA, p. 487 (1997).
35. I. Perichaud and S. Martinuzzi, in Symposium Proceedings, Vol. 469, Materials Research Society, Pittsburgh, PA, p. 493 (1997).
36. E. Spiecker, M. Seibt, and W. Schröter, Phys. Rev. B, 55, 9577 (1997).
37. H. Higuchi and S. Nakamura, Abstract 175, p. 412, The Electrochemical Society Extended Abstracts, Vol. 75-1, Toronto, Canada, May 11-16, 1975.
38. A. El Moussaoui, I. Tobias, and A. Luque, in Proceedings of the 2nd IEEE World Conference on Photovoltaic Energy Conversion, Joint Research Centre, European Commission, Ispra, Italy, p. 1858 (1998).