Grain boundaries in multicrystalline Si

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 19-26

  Chen, Jun ^a   Chen, Bin ^a,b   Lee, Woong ^a,b   Fukuzawa, Masayuki ^c   Yamada, Masayoshi ^c   Sekiguchi, Takashi ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

EBIC; Grain boundaries; Multicrystalline Si

Indexed keywords

DEFECTS; ELECTRIC CURRENTS; ELECTRON MICROSCOPES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MECHANICAL PROPERTIES; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

DARK FIELD; ELECTRICAL PROPERTY; ELECTRON-BEAM-INDUCED CURRENT; FE CONTAMINATION; FE IMPURITY; MULTICRYSTALLINE SI; RECOMBINATION ACTIVITY; RESIDUAL STRAINS; STRUCTURAL AND MECHANICAL PROPERTIES; TEM; TRANSMISSION ELECTRON MICROSCOPE; EBIC;

ELECTRIC PROPERTIES; ELECTRIC CURRENTS;

EID: 75849134459     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.19     Document Type: Conference Paper

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