High quality multicrystalline silicon grown by multi-stage solidification control method

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 389-392

  Nara, S ^a   Sekiguchi, T ^b   Chen, J ^b,c  

^a JFE STEEL CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; INGOTS; MICROSTRUCTURE; SOLAR CELLS; SOLIDIFICATION;

DEFECTS AND IMPURITIES IN CRYSTALS; METAL IMPURITIES; METHODS FOR CRYSTAL GROWTH; PHYSICS OF CRYSTAL GROWTH;

SILICON WAFERS;

EID: 10244241956     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004063     Document Type: Conference Paper

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